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전남대학교 차세대 지능형 소자 연구실의 학술 논문, 학회 발표, 특허 등 연구 성과를 소개합니다

[55] First Implementation of Edge-Contacted α-In2Se3 Ferroelectric Semiconductor Field-Effect Transistors and Their Application to Artificial Heterosynapse

Jong-Hyun Kim, Seung-Hwan Kim, Euyjin Park, Hyung-Jun Kim, Jeong-Kyu Kim, Hyun-Yong Yu*

Small•
IF: 12.1, JCR: 7.2%
•accepted•
2026.xx.xx
PDFSupplementary Informaion

[54] Machine Learning–Based Uncertainty Quantification and Design Optimization for Offset Compensation Sense Amplifiers in DRAMs

Hyerin Lee, Dongyeong Kim, Geon Kim, Suyeon Kim, Jewon Park, Sinwook Kim, Hyeona Seo, Chaehyuk Lim, Sowon Kim, Juwon Lee, Jeonghyeon Yun, Seung-Hwan Kim, Yongbok Lee, Suhyung Park, Myeongjin Kim, Myoungjin Lee*

IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems•
IF: 2.9
•Vol. 45, Iss. 3, pp. 1473-1486•
2026.03.01
PDF

[53] Unraveling In-Plane Crystallographic Anisotropy-Dependent Memory Performance in Van Der Waals α-In2Se3 Ferroelectric Semiconductor Field-Effect Transistors

Jong-Hyun Kim, Seung-Hwan Kim, Hyeong-Kyu Jin, Deji Akinwande, Hyun-Yong Yu*

Advanced Materials•
IF: 26.8, JCR: 2.1%
•Vol. 38, Iss. 7, pp. e17849•
2026.02.02
PDFSupplementary Informaion

[52] Enhanced Reliability of HfO2-Based Conductive Bridge Random Access Memory Through MgO Insertion

Si-Yeol Lee†, Seung-Hwan Kim†, In-Kook Hwang, Kwangkyo Jung, Hyun-Yong Yu, Hamin Park, Seung-heon Chris Baek*

Journal of Alloys and Compounds•
IF: 6.3, JCR: 10.8%
•Vol. 1047, pp. 184993•
2025.12.05
PDFSupplementary Informaion

[51] A Novel AZO Capping Approach on SnO Thin-Film Transistors for Efficient Threshold Voltage Modulation and Electrical Performance Enhancement

Jongyoun Park, Sung-Joo Song, Seung-Hwan Kim, Jong-Hyun Kim, Jeong-Kyu Kim, Hyun-Yong Yu*

Applied Surface Science•
IF: 6.9, JCR: 10.4%
•Vol. 711, pp. 164044•
2025.12.01
PDFSupplementary Informaion

[50] Schottky Barrier Height Lowering and Contact Resistivity Reduction via Crystalline Magnesium Oxide Interlayer on Semiconductor Surface

Seung-Hwan Kim, Yuji Yang, Daeyoon Baek, Seokwoo Jeon, Seung-heon Chris Baek*, Hyung-jun Kim*

Journal of Alloys and Compounds•
IF: 6.3, JCR: 10.8%
•Vol. 1042, pp. 184111•
2025.10.15
PDFSupplementary Informaion

[49] Novel Fermi-Level Alignment Approach to Schottky Barrier Height Modulation in MoTe2 with Metal-Graphene-Semiconductor Source/Drain Contact

Sung-Joo Song, Seung-Hwan Kim, Kyu Hyun Han, Jongyoun Park, Jeong-Kyu Kim, Hyun-Yong Yu*

Journal of Alloys and Compounds•
IF: 6.3, JCR: 10.8%
•Vol. 1037, pp. 182187•
2025.08.10
PDFSupplementary Informaion

[48] Schottky Barrier Height Engineering and Electrical Performance Enhancement Using ZnO as an Interlayer in MIS Contact Structures for SnO Thin-Film Transistors

Jongyoun Park, Sung-Joo Song, Seung-Hwan Kim, Kyu Hyun Han, Jong-Hyun Kim, Hyun-Yong Yu*

Applied Surface Science•
IF: 6.9, JCR: 10.4%
•Vol. 690, pp. 162578•
2025.05.01
PDFSupplementary Informaion

[47] Plasma Treatment Induced Charge Transfer for Realization of Negative Differential Transconductance in van der Waals Single-Channel

Kyu Hyun Han, Seung-Hwan Kim, Jong-Hyun Kim, Hyun-Yong Yu*

Advanced Functional Materials•
IF: 19, JCR: 4.5%
•Vol. 35, Iss. 15, pp. 2420666•
2025.04.10
PDFSupplementary Informaion

[46] Enhancement of the Proton-Electron Coupling Effect by an Ionic Oxide-Based Proton Reservoir for High-Performance Artificial Synaptic Transistors

Seung-Hwan Kim, Dong-Gyu Jin, Jong-Hyun Kim, Daeyoon Baek, Hyung-Jun Kim, Hyun-Yong Yu*

ACS Nano•
IF: 16.1, JCR: 5.9%
•Vol. 19, Iss. 1, pp. 535-545•
2025.01.14
PDFSupplementary Informaion

[45] Spin-Charge Conversion-Based Artificial Synaptic Device for Neuromorphic Computing

Seong Been Kim, Je-Jun Lee, Dongwon Choi, Seung-Hwan Kim, Jeong Ung Ahn, Ki Hyuk Han, Tae-Eon Park, OukJae Lee, Ki-Young Lee, Seokmin Hong, Byoung-Chul Min, Hyung-jun Kim, Do Kyung Hwang, Hyun Cheol Koo*

ACS Applied Electronic Materials•
IF: 4.4
•Vol. 7, Iss. 1, pp. 571-581•
2025.01.14
PDFSupplementary Informaion

[44] Novel Source/Drain Contact Structure for a-IGZO Devices: Oxygen-Scavenger-Layer Metal-Interlayer-Semiconductor (OSL MIS) Approach

Sung-Joo Song, Jong-Hyun Kim, Jongyoun Park, Seung-Hwan Kim, Dongjin Ko, Hyejung Choi, Seiyon Kim, Hyun-Yong Yu*

Applied Surface Science Advances•
IF: 7.5, JCR: 2.2%
•Vol. 25, pp. 100676•
2025.01.01
PDFSupplementary Informaion

[43] Enhanced Electrical Polarization in van der Waals α-In2Se3 Ferroelectric Semiconductor Field‐Effect Transistors by Eliminating Surface Screening Charge

Jong-Hyun Kim†, Seung-Hwan Kim†, Hyun-Yong Yu*

Small•
IF: 13.3, JCR: 6.6%
•Vol. 20, Iss. 50, pp. 2405459•
2024.12.12
PDFSupplementary Informaion

[42] Quasi-Zero-Dimensional Source/Drain Contact for Fermi-Level Unpinning in a Tungsten Diselenide (WSe2) Transistor: Approaching Schottky−Mott Limit

Euyjin Park, Seung-Hwan Kim, Seong-Ji Min, Kyu-Hyun Han, Jong-Hyun Kim, Seung-Geun Kim, Tae-Hang Ahn, Hyun-Yong Yu*

ACS Nano•
IF: 17.1, JCR: 5.7%
•Vol. 18, Iss. 43, pp. 29771-29778•
2024.10.29
PDFSupplementary Informaion

[41] High-κ Dielectric (HfO2)/2D Semiconductor (HfSe2) Gate Stack for Low-Power Steep-Switching Computing Devices

Taeho Kang, Joonho Park, Hanggyo Jung, Haeju Choi, Sang‐Min Lee, Nayeong Lee, Ryong‐Gyu Lee, Gahye Kim, Seung-Hwan Kim, Hyung‐Jun Kim, Cheol‐Woong Yang, Jongwook Jeon, Yong‐Hoon Kim, Sungjoo Lee*

Advanced Materials•
IF: 29.4, JCR: 1.06%
•Vol. 36, Iss. 26, pp. 2312747•
2024.06.26
PDFSupplementary Informaion

[40] Charge Transfer Mechanism for Realization of Double Negative Differential Transconductance

Kyu Hyun Han, Seung-Hwan Kim, Seung-Geun Kim, Jong-Hyun Kim, Sungjoo Song, Hyun-Yong Yu

npj 2D Materials and applications•
IF: 9.7, JCR: 11.6%
•Vol. 8, Iss. 15, pp. 1-9•
2024.02.29
PDFSupplementary Informaion

[39] Dielectric Interface Engineering Using Aminosilane Coupling Agent for Enhancement of Negative Differential Resistance Phenomenon

Kyu Hyun Han, Seung-Geun Kim, Seung-Hwan Kim, Jong-Hyun Kim, Seong-Hyun Hwang, Min-Su Kim, Sung-Joo Song, Hyun-Yong Yu*

Materials Today Advances•
IF: 10, JCR: 13.3%
•Vol. 21, pp. 100475•
2024.03.01
PDFSupplementary Informaion

[38] In-Depth Analysis on Self Alignment Effect of the Fermi-Level Using Graphene on Both n- and p-Type Semiconductors

Sungjoo Song†, Seung-Hwan Kim†, Kyu-Hyun Han, Hyung-Jun Kim, Hyun-Yong Yu*

ACS Applied Materials & Interfaces•
IF: 10.383, JCR: 13.95%
•Vol. 15, Iss. 49, pp. 57879-57889•
2023.11.30
PDFSupplementary Informaion

[37] Highly Tunable Negative Differential Resistance Device based on Insulator-to-Metal Phase Transition of Vanadium Dioxide

Jong-Hyun Kim, Seung-Geun Kim, Seung-Hwan Kim, Kyu-Hyun Han, Jiyoung Kim, Hyun-Yong Yu*

ACS Applied Materials & Interfaces•
IF: 10.383, JCR: 13.95%
•Vol. 15, Iss. 26, pp. 31608-31616•
2023.07.05
PDFSupplementary Informaion

[36] Excellent Improvement of Contact Resistivity and Thermal Stability for High Temperature Process after Silicidation of TiSi2 through Ta Interlayer for Diffusion Barrier

Min-Su Kim, Seong-Hyun Hwang, Seung-Hwan Kim, Jong-Hyun Kim, Euyjin Park, Kyu-Hyun Han, Hyun-Yong Yu*

IEEE Electron Device Letters•
IF: 4.816
•Vol. 44, Iss. 7, pp. 1040-1043•
2023.07.01
PDF

[35] Improvement of Polarization Switching in Ferroelectric Transistor by Interface Trap Reduction for Brain-Inspired Artificial Synapses

Dong-Gyu Jin, Seung-Geun Kim, Hyeok Jeon, Euyjin Park, Seung-Hwan Kim, Jiyoung Kim, Hyun-Yong Yu*

Materials Today Nano•
IF: 13.364, JCR: 8.26%
•Vol. 22, pp. 100320•
2023.06.01
PDFSupplementary Informaion

[34] Effective Threshold Voltage Modulation Technique for Steep-Slope 2D Atomic Threshold Switching Field-Effect Transistor

Seong-Hyun Hwang, Seung-Hwan Kim, Seung-Geun Kim, Min-Su Kim, Kyu-Hyun Han, Sungjoo Song, Jong-Hyun Kim, Euyjin Park, Dong-Gyu Jin, Hyun-Yong Yu*

Materials Today Nano•
IF: 9.918, JCR: 15.797%
•Vol. 18, pp. 100367•
2023.06.01
PDFSupplementary Informaion

[33] Effective Schottky Barrier Height and Interface Trap Density Reduction Engineering Using 2-Dimensional Reduced Graphene oxide Interlayer for Metal-Interlayer-Semiconductor Contact Structure

Sungjoo Song†, Seung-Hwan Kim†, Seung-Geun Kim, Kyu-Hyun Han, Hyung-Jun Kim, Hyun-Yong Yu*

Journal of Alloys and Compounds•
IF: 6.371, JCR: 5.696%
•Vol. 937, pp. 168327•
2023.03.15
PDFSupplementary Informaion

[32] Highly Reliable Electrochemical Metallization Threshold Switch Through Conductive Filament Engineering Using Two-Dimensional PtSe2 Insertion Layer

Min-Su Kim, Euyjin Park, Seung-Geun Kim, Jae-Hyeun Park, Seung-Hwan Kim, Kyu-Hyun Han, Hyun-Yong Yu*

Advanced Materials Interfaces•
IF: 6.389
•Vol. 10, Iss. 7, pp. 2202296•
2023.03.01
PDFSupplementary Informaion

[31] Low-temperature Laser Crystallization of Ge Layers Grown on MgO Substrates

Jongyeon Baek†, Seung-Hwan Kim†, Heejae Jeong†, Manh-Cuong Nguyen Nguyen, Daeyoon Baek, Seunghun Baik, An Hoang-Thuy Nguyen, Jong-Hwa Baek, Hyung-jun Kim*, Hyuk-Jun Kwon*, Rino Choi*

Applied Surface Science•
IF: 7.392, JCR: 2.5%
•Vol. 609, pp. 155368•
2023.01.30
PDF

[30] A Highly Controllable Doping Technique via Interdiffusion between Epitaxial Germanium Layers and GaAs

Hansung Kim, Gunwu Ju, Seung-Hwan Kim, Kiyoung Lee, Myoungho Jeong, Hyun Cheol Koo, Hyung-jun Kim*

Surfaces and Interfaces•
IF: 3.724, JCR: 16.67%
•Vol. 26, pp. 101390•
2021.10.01
PDFSupplementary Informaion

[29] Enhancement of Synaptic Characteristics Achieved by the Optimization of Proton–Electron Coupling Effect in a Solid-State Electrolyte-Gated Transistor

Dong‐Gyu Jin, Seung-Hwan Kim, Seung‐Geun Kim, June Park, Euyjin Park, Hyun‐Yong Yu*

Small•
IF: 11.459, JCR: 6.13%
•Vol. 17, Iss. 30, pp. 2100242•
2021.07.07
PDFSupplementary Informaion

[28] Steep-Slope Gate-Connected Atomic Threshold Switching Field-Effect Transistor with MoS2 Channel and Its Application to Infrared Detectable Phototransistors

Seung‐Geun Kim, Seung-Hwan Kim, Gwang‐Sik Kim, Hyeok Jeon, Taehyun Kim, Hyun‐Yong Yu*

Advanced Science•
IF: 15.84, JCR: 4.94%
•Vol. 8, Iss. 12, pp. 2100208•
2021.06.01
PDFSupplementary Informaion

[27] Enhancement of DRAM Performance by Adopting Metal–Interlayer–Semiconductor Source/Drain Contact Structure on DRAM Cell

Muyeong Son, Seung Geun Jung, Seung-Hwan Kim, Euyjin Park, Sul-Hwan Lee, Hyun-Yong Yu*

IEEE Transactions on Electron Devices•
IF: 2.913
•Vol. 68, Iss. 5, pp. 2275-2280•
2021.05.01
PDF

[26] An Artificial Neuron Using a Bipolar Electrochemical Metallization Switch and Its Enhanced Spiking Properties through Filament Confinement

Taehyun Kim†, Seung-Hwan Kim†, Jae‐Hyeun Park, June Park, Euyjin Park, Seung‐Geun Kim, Hyun-Yong Yu*

Advanced Electronic Materials•
IF: 6.593, JCR: 15.81%
•Vol. 7, Iss. 1, pp. 2000410•
2021.01.01
PDFSupplementary Informaion

[25] Hysteresis Modulation on Van der Waals-Based Ferroelectric Field-Effect Transistor by Interfacial Passivation Technique and Its Application in Optic Neural Networks

Hyeok Jeon, Seung‐Geun Kim, June Park, Seung-Hwan Kim, Euyjin Park, Jiyoung Kim, Hyun‐Yong Yu*

Small•
IF: 10.856, JCR: 6.42%
•Vol. 16, Iss. 49, pp. 2004371•
2020.12.01
PDFSupplementary Informaion

[24] Schottky Barrier Engineering with a Metal Nitride–Double Interlayer–Semiconductor Contact Structure to Achieve High Thermal Stability and Ultralow Contact Resistivity

Euyjin Park, Seung-Hwan Kim, Hyun‐Yong Yu*

Applied Surface Science•
IF: 5.155, JCR: 2.5%
•Vol. 531, pp. 147329•
2020.11.30
PDFSupplementary Informaion

[23] Improved Switching Characteristics of p-Type Tin Monoxide Field-Effect Transistors through Schottky Energy Barrier Engineering

Taikyu Kim, Jeong-Kyu Kim, Baekeun Yoo, Hongwei Xu, Sungyeon Yim, Seung-Hwan Kim, Hyun-Yong Yu, Jae Kyeong Jeong*

Journal of Materials Chemistry C•
IF: 7.393, JCR: 84.69%
•Vol. 8, pp. 201-208•
2020.01.07
PDF

[22] Ultralow Schottky Barrier Height Achieved by Using Molybdenum Disulfide/Dielectric Stack for Source/Drain Contact

Seung-Hwan Kim, Kyu Hyun Han, Euyjin Park, Seung-Geun Kim, Hyun-Yong Yu*

ACS Applied Materials & Interfaces•
IF: 8.097, JCR: 8.95%
•Vol. 11, Iss. 37, pp. 34084-34090•
2019.09.18
PDFSupplementary Informaion

[21] Infrared Detectable MoS2 Phototransistor and Its Application to Artificial Multilevel Optic-Neural Synapse

Seung-Geun Kim, Seung-Hwan Kim, June Park, Gwang-Sik Kim, Jae-Hyeun Park, Krishna C Saraswat, Jiyoung Kim, Hyun-Yong Yu*

ACS Nano•
IF: 13.903, JCR: 5.74%
•Vol. 13, Iss. 9, pp. 10294-10300•
2019.09.01
PDFSupplementary Informaion

[20] Nitrogen-Induced Filament Confinement Technique for a Highly Reliable Hafnium-Based Electrochemical Metallization Threshold Switch and Its Application to Flexible Logic Circuits

Jae-Hyeun Park, Seung-Hwan Kim, Seung-Geun Kim, Keun Heo, Hyun-Yong Yu*

ACS Applied Materials & Interfaces•
IF: 8.097, JCR: 8.95%
•Vol. 11, Iss. 9, pp. 9182-9189•
2019.03.06
PDFSupplementary Informaion

[19] Novel Conductive Filament Metal-Interlayer-Semiconductor Contact Structure for Ultralow Contact Resistance Achievement

Seung-Hwan Kim, Kyu Hyun Han, Gwang-Sik Kim, Seung-Geun Kim, Jiyoung Kim, Hyun-Yong Yu*

ACS Applied Materials & Interfaces•
IF: 8.097, JCR: 8.95%
•Vol. 11, Iss. 6, pp. 6230-6237•
2019.02.13
PDFSupplementary Informaion

[18] Low-Temperature Hybrid Dopant Activation Technique Using Pulsed Green Laser for Heavily-Doped n-Type SiGe Source/Drain

Seung-Geun Kim, Gwang-Sik Kim, Seung-Hwan Kim, Hyun-Yong Yu*

IEEE Electron Device Letters•
IF: 3.433
•Vol. 39, Iss. 12, pp. 1828-1831•
2018.12.01
PDF

[17] Universal Metal–Interlayer–Semiconductor Contact Modeling Considering Interface-State Effect on Contact Resistivity Degradation

Jeong-Kyu Kim†, Seung-Hwan Kim†, Taikyu Kim, Hyun-Yong Yu*

IEEE Transactions on Electron Devices•
IF: 2.62
•Vol. 65, Iss. 11, pp. 4982-4987•
2018.11.01
PDF

[16] Effective Schottky Barrier Height Lowering Technique for InGaAs Contact Scheme: DMIGS and Dit Reduction and Interfacial Dipole Formation

Seung-Hwan Kim, Gwang-Sik Kim, Sun-Woo Kim, Hyun-Yong Yu*

Applied Surface Science•
IF: 4.439, JCR: 2.63%
•Vol. 453, pp. 48-55•
2018.09.30
PDFSupplementary Informaion

[15] Novel Conductive Filament Metal–Interlayer–Semiconductor Contact Structure for Ultralow Contact Resistance Achievement

Seung-Hwan Kim, Gwang-Sik Kim, June Park, Changmin Lee, Hyoungsub Kim, Jiyoung Kim, Joon Hyung Shim, Hyun-Yong Yu*

ACS Applied Materials & Interfaces•
IF: 8.097, JCR: 8.95%
•Vol. 10, Iss. 31, pp. 26378-26386•
2018.07.13
PDFSupplementary Informaion

[14] Effects of Metal–Interlayer–Semiconductor Source/Drain Contact Structure on n-Type Germanium Junctionless FinFETs

Seung-Geun Jung, Seung-Hwan Kim, Gwang-Sik Kim, Hyun-Yong Yu*

IEEE Transactions on Electron Devices•
IF: 2.62
•Vol. 65, Iss. 8, pp. 3136-3141•
2018.07.02
PDF

[13] Schottky Barrier Height Engineering for Electrical Contacts of Multilayered MoS2 Transistors with Reduction of Metal-Induced Gap States

Gwang-Sik Kim, Seung-Hwan Kim, June Park, Kyu Hyun Han, Jiyoung Kim, Hyun-Yong Yu*

ACS Nano•
IF: 13.709, JCR: 4.04%
•Vol. 12, Iss. 6, pp. 6292-6300•
2018.05.31
PDFSupplementary Informaion

[12] Fermi-Level Unpinning Technique with Excellent Thermal Stability for n-Type Germanium

Gwang-Sik Kim, Seung-Hwan Kim, Tae In Lee, Byung Jin Cho, Changhwan Choi, Changhwan Shin, Joon Hyung Shim, Jiyoung Kim, Hyun-Yong Yu*

ACS Applied Materials & Interfaces•
IF: 7.504, JCR: 7.88%
•Vol. 9, Iss. 41, pp. 35988-35997•
2017.10.18
PDFSupplementary Informaion

[11] An Electrical Analysis of a Metal-Interlayer-Semiconductor Structure on High-Quality Si1−x Gex Films for Non-Alloyed Ohmic Contact

Seung-Geun Kim, Gwang-Sik Kim, Seung-Hwan Kim, Sun-Woo Kim, June Park, Hyun-Yong Yu*

Journal of Nanoscience and Nanotechnology•
IF: 1.483
•Vol. 17, Iss. 10, pp. 7323-7326•
2017.10.01
PDF

[10] The Effect of Interfacial Dipoles on the Metal-Double Interlayers-Semiconductor Structure and Their Application in Contact Resistivity Reduction

Sun-Woo Kim, Seung-Hwan Kim, Gwang-Sik Kim, Changhwan Choi, Rino Choi, Hyun-Yong Yu*

ACS Applied Materials & Interfaces•
IF: 7.145, JCR: 9.04%
•Vol. 8, Iss. 51, pp. 35614-35620•
2016.12.28
PDFSupplementary Informaion

[9] Effective Schottky Barrier Height Lowering of Metal/n-Ge with a TiO2/GeO2 Interlayer Stack

Gwang-Sik Kim, Sun-Woo Kim, Seung-Hwan Kim, June Park, Yujin Seo, Byung Jin Cho, Changhwan Shin, Joon Hyung Shim, Hyun-Yong Yu*

ACS Applied Materials & Interfaces•
IF: 7.145, JCR: 9.04%
•Vol. 8, Iss. 51, pp. 35419-35425•
2016.12.28
PDFSupplementary Informaion

[8] Contact Resistance Reduction Using Dielectric Materials of Nanoscale Thickness on Silicon for Monolithic 3D Integration

Seung-Hwan Kim, Gwang-Sik Kim, Seyong Oh, Jin-Hong Park, Hyun-Yong Yu*

Journal of Nanoscience and Nanotechnology•
IF: 1.483
•Vol. 16, Iss. 12, pp. 12764-12767•
2016.12.01
PDF

[7] Ar Plasma Treatment for III–V Semiconductor-Based Transistor Source/Drain Contact Resistance Reduction

Seung-Hwan Kim, Sun-Woo Kim, Gwang-Sik Kim, Jinok Kim, Jin-Hong Park, Hyun-Yong Yu*

Journal of Nanoscience and Nanotechnology•
IF: 1.483
•Vol. 16, Iss. 10, pp. 10389-10392•
2016.10.01
PDF

[6] Nondegenerate n-Type Doping Phenomenon on Molybdenum Disulfide (MoS2) by Zinc Oxide (ZnO)

Dong-Ho Kang, Seong-Taek Hong, Aely Oh, Seung-Hwan Kim, Hyun-Yong Yu*, Jin-Hong Park

Materials Research Bulletin•
IF: 2.435
•Vol. 82, pp. 26-30•
2016.10.01
PDF

[5] Effect of Hydrogen Annealing on Contact Resistance Reduction of Metal–Interlayer–n-Germanium Source/Drain Structure

Gwang-Sik Kim, Gwangwe Yoo, Yujin Seo, Seung-Hwan Kim, Karam Cho, Byung Jin Cho, Changhwan Shin, Jin-Hong Park, Hyun-Yong Yu*

IEEE Electron Device Letters•
IF: 2.528, JCR: 15.37%
•Vol. 37, Iss. 6, pp. 709-712•
2016.04.27
PDF

[4] Non-Alloyed Ohmic Contacts on GaAs Using Metal-Interlayer-Semiconductor Structure With SF6 Plasma Treatment

Seung-Hwan Kim, Gwang-Sik Kim, Sun-Woo Kim, Jeong-Kyu Kim, Changhwan Choi, Jin-Hong Park, Rino Choi, Hyun-Yong Yu*

IEEE Electron Device Letters•
IF: 2.528, JCR: 15.37%
•Vol. 37, Iss. 4, pp. 373-376•
2016.02.03
PDF

[3] Fermi-Level Unpinning using a Ge-Passivated Metal–Interlayer–Semiconductor Structure for Non-Alloyed Ohmic Contact of High-Electron-Mobility Transistors

Seung-Hwan Kim, Gwang-Sik Kim, Jeong-Kyu Kim, Jin-Hong Park, Changhwan Shin, Changhwan Choi, Hyun-Yong Yu*

IEEE Electron Device Letters•
IF: 2.754, JCR: 11.45%
•Vol. 36, Iss. 9, pp. 884-886•
2015.07.07
PDF

[2] Surface Passivation of Germanium Using SF6 Plasma to Reduce Source/Drain Contact Resistance in Germanium n-FET

Gwang-Sik Kim, Seung-Hwan Kim, Jeong-Kyu Kim, Changhwan Shin, Jin-Hong Park, Krishna C Saraswat, Byung Jin Cho, Hyun-Yong Yu*

IEEE Electron Device Letters•
IF: 2.754, JCR: 11.45%
•Vol. 36, Iss. 8, pp. 745-747•
2015.06.02
PDF

[1] Specific Contact Resistivity Reduction Through Ar Plasma-Treated TiO2−x Interfacial Layer to Metal/Ge Contact

Gwang-Sik Kim, Seung-Hwan Kim, Jeong-Kyu Kim, Jaesung Jo, Changhwan Shin, Jin-Hong Park, Krishna C Saraswat, Hyun-Yong Yu*

IEEE Electron Device Letters•
IF: 3.023, JCR: 11.49%
•Vol. 35, Iss. 11, pp. 1076-1078•
2014.09.24
PDF